Manufacturing method of semiconductor device, semiconductor device and electronic apparatus
US8786089B2 · kind B2 · utility
1Cited by
1References
8Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 26, 2012 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Apr 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A manufacturing method of a semiconductor device includes exposing a wiring layer which is formed of an alloy including two or more types of metals having different standard electrode potentials, on one surface side of a semiconductor substrate and performing a plasma process of allowing plasma generated by a mixture gas of a gas including nitrogen and an inert gas or plasma generated by a gas including nitrogen to irradiate a range which includes an exposed surface of the wiring layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.