Dynamic random access memory with multiple thermal sensors disposed therein and control method thereof
US8787105B2 · kind B2 · utility
6Cited by
1References
15Claims
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Key dates
| Filing date | May 10, 2012 |
| Grant date | Jul 22, 2014 |
| Priority date | — |
| Expiry date | Mar 23, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/40626
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A dynamic random access memory (DRAM) with multiple thermal sensors disposed therein and a control method for the DRAM. A DRAM in accordance with an exemplary embodiment of the invention provides multi-zone temperature detection. The DRAM comprises a plurality of banks, a plurality of thermal sensors and a control unit. The thermal sensors are disposed between the banks. The control unit controls the thermal sensors to obtain sensed temperatures, and sets a self-refresh cycle for all of the banks based on the highest one of the sensed temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.