Mask and method for fabricating semiconductor device
US8790851B2 · kind B2 · utility
2Cited by
0References
13Claims
0Family size
Assignee
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Key dates
| Filing date | Aug 8, 2012 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Aug 8, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/42
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photo mask for exposing according to an embodiment includes a mark pattern arranged in a mark region that is different from an effective region to form a semiconductor device; and a regular pattern arranged in the mark region and around the mark pattern and smaller than the mark pattern in size and pitch.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.