Methods of forming photolithographic patterns by negative tone development
US8790867B2 · kind B2 · utility
15Cited by
2References
11Claims
0Family size
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Key dates
| Filing date | Nov 3, 2012 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Nov 3, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/11
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Provided are methods of forming photolithographic patterns by negative tone development. The methods employ a photoresist composition that includes a polymer having a unit of the following general formula (I):wherein: R1 represents hydrogen or a C1 to C3 alkyl group; a represents an integer from 1 to 3; and b represents 0 or 1. The methods find particular applicability in the manufacture of semiconductor devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.