Semiconductor device and method for manufacturing same
US8790979B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Feb 8, 2013 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Feb 8, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
According to one embodiment, a method for manufacturing a semiconductor device includes forming a fin in an upper surface of a semiconductor substrate to extend in a first direction, forming a mask film, making a plurality of first trenches in the mask film to extend in a second direction to reach the fin, filling sidewall members into the first trenches, making a second trench by removing the mask film from a portion of a space between the sidewall members, forming a gate insulating film and a gate electrode on a surface of a first portion of the fin disposed inside the second trench, making a third trench by removing the mask film from the remaining space between the sidewall members, and causing a second portion of the fin disposed inside the third trench to become a conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.