Processing method and processing device of semiconductor wafer, and semiconductor wafer
US8790995B2 · kind B2 · utility
2Cited by
3References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 16, 2012 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Jun 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, a substrate processing method is disclosed. The above method includes: grinding an outer edge portion on a back surface of a semiconductor wafer with a semiconductor element formed on its front surface with a first grindstone or blade to thereby form an annular groove; grinding a projecting portion on an inner side of the groove with a second grindstone to thereby form a recessed portion integrally with the groove on the back surface of the semiconductor wafer; and grinding a bottom surface of the recessed portion including a ground surface made by the second grindstone with a third grindstone.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.