Methods for fabricating integrated circuits with fluorine passivation

US8791003B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Dina H. Triyoso · Mechanicville, US
• Elke Erben · Dresden, DE
• Robert Binder · Dresden, DE

Key dates

• Filing date: Jun 21, 2012
• Grant date: Jul 29, 2014
• Expiry date: Jun 21, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02359
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate and forming a gate structure on the semiconductor substrate. The gate includes a high-k dielectric material. In the method, a fluorine-containing liquid is contacted with the high-k dielectric material and fluorine is incorporated into the high-k dielectric material.