Method for reducing wordline bridge rate
US8791022B2 · kind B2 · utility
0Cited by
2References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2010 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Mar 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method of forming a wordline is provided in the present invention. The proposed method includes steps of: (a) etching a metal-silicide layer and a POLY layer via a hard mask, wherein the metal-silicide layer is disposed on the POLY layer; (b) forming a POLY recess in the POLY layer; and (c) forming a liner film covering the metal-silicide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.