Patent · US Active

Chemical vapor deposition process for aluminum silicon nitride

US8791034B2 · kind B2 · utility

26Cited by

10References

28Claims

0Family size

Assignee

Cornell University · IT

Inventors

James R. Shealy · Ithaca, US
Richard J. Brown · Los Gatos, US

Key dates

Filing date	Jun 28, 2010
Grant date	Jul 29, 2014
Priority date	—
Expiry date	Jul 31, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH01L21/0228
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A chemical vapor deposition method for forming an aluminum-silicon nitride layer upon a substrate uses an aluminum precursor, a silicon precursor and a nitrogen precursor under chemical vapor deposition conditions to deposit the aluminum-silicon nitride layer upon the substrate. The aluminum-silicon nitride layer has an index of refraction interposed between silicon nitride and aluminum nitride. The aluminum-silicon nitride layer also has a bandgap from about 4.5 to about 6 eV and a permittivity from about 6×10^-11 to about 8×10^-11 F/m. The aluminum-silicon nitride layer may be further thermally annealed to reduce a hydrogen content of the aluminum-silicon nitride layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.