High density gallium nitride devices using island topology

US8791508B2 · kind B2 · utility

Assignee

• GaN Systems Inc. · CA

Inventors

• John Roberts · Ottawa, CA
• Ahmad Mizan · Gatineau, CA
• Girvan Patterson · Ottawa, CA
• Greg P. Klowak · Ottawa, CA

Key dates

• Filing date: Apr 13, 2011
• Grant date: Jul 29, 2014
• Expiry date: Apr 13, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/82
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A Gallium Nitride (GaN) series of devices—transistors and diodes are disclosed—that have greatly superior current handling ability per unit area than previously described GaN devices. The improvement is due to improved layout topology. The devices also include a simpler and superior flip chip connection scheme and a means to reduce the thermal resistance. A simplified fabrication process is disclosed and the layout scheme which uses island electrodes rather than finger electrodes is shown to increase the active area density by two to five times that of conventional interdigitated structures. Ultra low on resistance transistors and very low loss diodes can be built using the island topology. Specifically, the present disclosure provides a means to enhance cost/effective performance of all lateral GaN structures.