Power semiconductor device including a double metal contact
US8791525B2 · kind B2 · utility
1Cited by
2References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 25, 2008 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Oct 23, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/258
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A power semiconductor device that includes a stack of a thin metal layer and a thick metal layer over the active region thereof, and a method for the fabrication thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.