Magnetic memory device and magnetic memory
US8791534B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 16, 2011 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Jul 14, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B61/22
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
In a perpendicular magnetization domain wall motion MRAM in which the magnetizations of both ends of a magnetization free layer are pinned by magnetization pinned layers, the increase of a write current due to leakage magnetic field from the magnetization pinned layer is prevented. A first displacement is present between a first boundary line and a first vertical line, where a curve portion, which crosses a first magnetization free layer, of an outer circumferential line of a first magnetization pinned layer is the first boundary line, a segment which links a center of a magnetization free region and a center of a first magnetization pinned region is a first segment, and a segment, which is a vertical line of the first segment, and which comes in contact with the first boundary line is the first vertical line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.