Vertical integrated circuit switches, design structure and methods of fabricating same
US8791778B2 · kind B2 · utility
12Cited by
32References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 16, 2013 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Sep 16, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Vertical integrated MEMS switches, design structures and methods of fabricating such vertical switches is provided herein. The method of manufacturing a MEMS switch, includes forming at least two vertically extending vias in a wafer and filling the at least two vertically extending vias with a metal to form at least two vertically extending wires. The method further includes opening a void in the wafer from a bottom side such that at least one of the vertically extending wires is moveable within the void.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.