Patent · US Active

Method and system to predict lithography focus error using simulated or measured topography

US8792080B2 · kind B2 · utility

2Cited by
12References
11Claims
0Family size

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Inventors

Key dates

Filing dateJan 27, 2011
Grant dateJul 29, 2014
Priority date
Expiry dateJul 6, 2032

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG06F30/398
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A method and system to predict lithography focus error using chip topography data is disclosed. The chip topography data may be measured or simulated topography data. A plane is best fitted to the topography data, and residuals are computed. The residuals are then used to make a prediction regarding the focus error. The density ratio of metal to dielectric may also be used as a factor in determining the predicted focus error.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.