Method and system to predict lithography focus error using simulated or measured topography
US8792080B2 · kind B2 · utility
2Cited by
12References
11Claims
0Family size
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Key dates
| Filing date | Jan 27, 2011 |
| Grant date | Jul 29, 2014 |
| Priority date | — |
| Expiry date | Jul 6, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/398
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method and system to predict lithography focus error using chip topography data is disclosed. The chip topography data may be measured or simulated topography data. A plane is best fitted to the topography data, and residuals are computed. The residuals are then used to make a prediction regarding the focus error. The density ratio of metal to dielectric may also be used as a factor in determining the predicted focus error.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.