Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates

US8795430B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Robert M. Farrell · Goleta, US
• Michael Iza · Goleta, US
• James S. Speck · Fremont, US
• Steven P. DenBaars · Goleta, US
• Shuji Nakamura · Goleta, US

Key dates

• Filing date: Mar 2, 2010
• Grant date: Aug 5, 2014
• Expiry date: Sep 1, 2032

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T428/31
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for improving the growth morphology of (Ga,Al,In,B)N thin films on nonpolar or semipolar (Ga,Al,In,B)N substrates, wherein a (Ga,Al,In,B)N thin film is grown directly on a nonpolar or semipolar (Ga,Al,In,B)N substrate or template and a portion of the carrier gas used during growth is comprised of an inert gas. Nonpolar or semipolar nitride LEDs and diode lasers may be grown on the smooth (Ga,Al,In,B)N thin films grown by the present invention.