Material for forming resist sensitization film and production method of semiconductor device
US8795951B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 14, 2010 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Jan 13, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/2059
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A material for forming a resist sensitization film contains a metal salt, a resin and, a solvent. A method for producing a semiconductor device contains applying such material (or a resist) onto a processing surface so as to form a resist sensitization film or a resist film, applying a resist (or the aforementioned material) onto the resist sensitization film so as to form a resist film (or a resist sensitization film); exposing the resist film (or the resist film and the resist sensitization film) to exposure light, and developing the exposed resist film (or the exposed resist film and resist sensitization film) so as to form a resist pattern; and etching the processing surface using the resist pattern as a mask so as to pattern the processing surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.