Method for forming magnetic tunnel junction structure and method for forming magnetic random access memory using the same
US8796042B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 1, 2011 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Nov 7, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a magnetic tunnel junction structure includes forming a magnetic tunnel junction layer on a substrate. A mask pattern is formed on a region of the second magnetic layer. A magnetic tunnel junction layer pattern and a sidewall dielectric layer pattern on at least one sidewall of the magnetic tunnel junction layer pattern are formed by performing at least one etch process and at least one oxidation process multiple times. The at least one etch process may include a first etch process to etch a portion of the magnetic tunnel junction layer using an inert gas and the mask pattern to form a first etch product. The at least one oxidation process may include a first oxidation process to oxidize the first etch product attached on an etched side of the magnetic tunnel junction layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.