Gallium nitride to silicon direct wafer bonding
US8796054B2 · kind B2 · utility
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Key dates
| Filing date | May 31, 2012 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | May 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/81
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A direct wafer bonding process for joining GaN and silicon substrates involves pre-treating each of the wafers in an ammonia plasma in order to render the respective contact surfaces ammophilic. The GaN substrate and the silicon substrate may each comprise single crystal wafers. The resulting hybrid semiconductor structure can be used to form high quality, low cost LEDs.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.