Semiconductor structure and method for forming the same
US8796081B2 · kind B2 · utility
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3Claims
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Key dates
| Filing date | Sep 7, 2011 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Sep 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/751
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure is provided, comprising: a Si substrate; a porous structure layer formed on the Si substrate, in which the porous structure layer has a flat surface and comprises a Si1-xGex layer with low Ge content; and a Ge-containing layer formed on the porous structure layer, in which the Ge containing layer comprises a Ge layer or a Si1-yGey layer with high Ge content and x≦y. Further, a method for forming the semiconductor structure is also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.