Semiconductor structure and method for making same

US8796089B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Detlef Wilhelm · Regensburg, DE
• Guenter Pfeifer · Pentling, DE
• Bernd Eisener · Höhenkirchen-Siegertsbrunn, DE
• Dieter Claeys · Burglengenfeld, DE

Key dates

• Filing date: Nov 25, 2013
• Grant date: Aug 5, 2014
• Expiry date: Nov 25, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/85

Abstract

An embodiment relates to a method of forming a semiconductor structure, comprising: forming a first semiconductor layer; forming a second semiconductor layer over the first semiconductor layer; forming a third semiconductor layer over the second semiconductor layer; forming an opening in the first, second and third semiconductor layers; forming a conductive region within the first, the and third semiconductor layer, the conductive region surrounding the opening, the conductive region being electrically coupled to the first semiconductor layer; forming a dielectric layer in the opening and over the conductive region; and forming a conductive layer over the dielectric layer in the opening.