Nanoelectronic structure and method of producing such
US8796119B2 · kind B2 · utility
6Cited by
36References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 3, 2013 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | May 3, 2033 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/938
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to semiconductor devices comprising semiconductor nanoelements. In particular the invention relates to devices having a volume element having a larger diameter than the nanoelement arranged in epitaxial connection to the nanoelement. The volume element is being doped in order to provide a high charge carrier injection into the nanoelement and a low access resistance in an electrical connection. The nanoelement may be upstanding from a semiconductor substrate. A concentric layer of low resistivity material forms on the volume element forms a contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.