Variable resistance element, semiconductor device including variable resistance element, and methods for manufacturing variable resistance element and semiconductor device
US8796659B2 · kind B2 · utility
1Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Mar 16, 2011 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Jul 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/50
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A variable resistance element includes a first electrode, a second electrode and an ion conduction layer interposed between the first and second electrodes. The ion conduction layer contains an organic oxide containing at least oxygen and carbon. The carbon concentration distribution in the ion conduction layer is such that the carbon concentration in an area closer to the first electrode is greater than that in an area closer to the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.