High electron mobility transistors and methods of manufacturing the same
US8796737B2 · kind B2 · utility
5Cited by
2References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2011 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Jan 25, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/513
Abstract
High electron mobility transistors (HEMTs) and methods of manufacturing the same. A HEMT may include a channel layer and a channel supply layer, and the channel supply layer may be a multilayer structure. The channel supply layer may include an etch stop layer and an upper layer on the etch stop layer. A recess region may be in the upper layer. The recess region may be a region recessed to an interface between the upper layer and the etch stop layer. A gate electrode may be on the recess region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.