Fin-like field effect transistor (FinFET) device and method of manufacturing same
US8796759B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 15, 2010 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Nov 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A FinFET device and method for fabricating a FinFET device is disclosed. An exemplary FinFET device includes a semiconductor substrate; a fin structure disposed over the semiconductor substrate; and a gate structure disposed on a portion of the fin structure. The gate structure traverses the fin structure and separates a source region and a drain region of the fin structure, the source and drain region defining a channel therebetween. The source and drain region of the fin structure include a strained source and drain feature. The strained source feature and the strained drain feature each include: a first portion having a first width and a first depth; and a second portion disposed below the first portion, the second portion having a second width and a second depth. The first width is greater than the second width, and the first depth is less than the second depth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.