Method and structure of monolithetically integrated micromachined microphone using IC foundry-compatiable processes
US8796790B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 23, 2009 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Oct 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04R2201/003
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A monolithically integrated MEMS and CMOS substrates provided by an IC-foundry compatible process. The CMOS substrate is completed first using standard IC processes. A diaphragm with stress relief corrugated structure is then fabricated on top of the CMOS. Air vent holes are then etched in the CMOS substrate. Finally, the microphone device is encapsulated by a thick insulating layer at the wafer level. The monolithically integrated microphone that adopts IC foundry-compatible processes yields the highest performance, smallest form factor, and lowest cost. Using this architecture and fabrication flow, it is feasible and cost-effective to make an array of Silicon microphones for noise cancellation, beam forming, better directionality and fidelity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.