Patent · US Active

Plasma cell and method of manufacturing a plasma cell

US8796927B2 · kind B2 · utility

4Cited by
4References
26Claims
0Family size

Assignee

Inventor

Key dates

Filing dateFeb 3, 2012
Grant dateAug 5, 2014
Priority date
Expiry dateOct 7, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J2211/326
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A plasma cell and a method for making a plasma cell are disclosed. In accordance with an embodiment of the present invention, a cell comprises a semiconductor material, an opening disposed in the semiconductor material, a dielectric layer lining a surface of the opening, a cap layer closing the opening, a first electrode disposed adjacent the opening, and a second electrode disposed adjacent the opening.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.