Methods for modeling of FinFET width quantization
US8799848B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 15, 2013 |
| Grant date | Aug 5, 2014 |
| Priority date | — |
| Expiry date | Jan 15, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0126
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for modeling FinFET width quantization is described. The method includes fitting a FinFET model of a FinFET device to single fin current/voltage characteristics. The FinFET device comprises a plurality of fins. The method includes obtaining statistical data of at least one sample FinFET device. The statistical data includes DIBL data and SS data. The method also includes fitting the FinFET model to a variation in a current to turn off the finFETs device (IOFF) in the statistical data using the DIBL data and the SS data and determining a model for a voltage to turn off the finFETs device (VOFF). The method also includes fitting the FinFET model to the VOFF.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.