Stable, concentratable silicon wafer polishing composition and related methods
US8801959B1 · kind B1 · utility
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10Claims
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Key dates
| Filing date | Apr 11, 2013 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Apr 11, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30625
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A stable, concentratable silicon wafer polishing composition for polishing silicon wafers is provided, containing: water; an abrasive; a cation according to formula (I); piperazine or a piperazine derivative according to formula (II); and, optionally, a pH adjusting agent; wherein the polishing composition exhibits a silicon removal rate of at least 300 nm/min. Also provided are methods of making and using the stabilized, concentratable chemical mechanical polishing composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.