Tellurium precursors for film deposition
US8802194B2 · kind B2 · utility
2Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 24, 2011 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Sep 18, 2032 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/45531
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Methods and compositions for depositing a tellurium-containing film on a substrate are disclosed. A reactor and at least one substrate disposed in the reactor are provided. A tellurium-containing precursor is provided and introduced into the reactor, which is maintained at a temperature ranging from approximately 20° C. to approximately 100° C. Tellurium is deposited on to the substrate through a deposition process to form a thin film on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.