Systems and methods for thin-film deposition of metal oxides using excited nitrogen-oxygen species
US8802201B2 · kind B2 · utility
521Cited by
58References
19Claims
0Family size
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Key dates
| Filing date | Dec 29, 2011 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Dec 29, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01B2201/64
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention relates to a process and system for depositing a thin film onto a substrate. One aspect of the invention is depositing a thin film metal oxide layer using atomic layer deposition (ALD).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.