Methods for hybrid wafer bonding
US8802538B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2013 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Jun 26, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for hybrid wafer bonding. In an embodiment, a method is disclosed that includes forming a metal pad layer in a dielectric layer over at least two semiconductor substrates; performing chemical mechanical polishing on the semiconductor substrates to expose a surface of the metal pad layer and planarize the dielectric layer to form a bonding surface on each semiconductor substrate; performing an oxidation process on the at least two semiconductor substrates to oxidize the metal pad layer to form a metal oxide; performing an etch to remove the metal oxide, recessing the surface of the metal pad layer from the bonding surface of the dielectric layer of each of the at least two semiconductor substrates; physically contacting the bonding surfaces of the at least two semiconductor substrates; and performing a thermal anneal to form bonds between the metal pads of the semiconductor substrates. Additional methods are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.