Inventor · Hsinchu, TW

Xiaomeng Chen

102Patents
11h-index
125Co-inventors
83Inventor score

Filing activity: Oct 3, 2000 → Jan 8, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US6573606B2 Chip to wiring interface with single metal alloy layer applied to surface of copper interconnect Electricity 258 Expired
US8802538B1 Methods for hybrid wafer bonding Electricity 227 Active
US9142517B2 Hybrid bonding mechanisms for semiconductor wafers Electricity 210 Active
US9257399B2 3D integrated circuit and methods of forming the same Electricity 206 Active
US9443796B2 Air trench in packages incorporating hybrid bonding Electricity 198 Active
US9711555B2 Dual facing BSI image sensors with wafer level stacking Electricity 28 Active
US6503834B1 Process to increase reliability CuBEOL structures Electricity 28 Expired
US9960129B2 Hybrid bonding mechanisms for semiconductor wafers Electricity 20 Active
US8816358B1 Plasmonic nanostructures for organic image sensors Emerging Cross-Sectional Technologies 16 Active
US11048294B2 Liquid crystal display comprising a front camera disposed inside a through hole that forms a light channel and extends through the liquid crystal display, electronic device comprising the same Electricity 14 Active
US9646860B2 Alignment systems and wafer bonding systems and methods Electricity 12 Active
US8901609B1 Transistor having doped substrate and method of making the same Electricity 10 Active
US9170325B2 Distance measurements between computing devices Physics 8 Active
US8237247B2 CMOS devices incorporating hybrid orientation technology (HOT) with embedded connectors Electricity 8 Active
US10790189B2 3D integrated circuit and methods of forming the same Electricity 7 Active
US9446467B2 Integrate rinse module in hybrid bonding platform Electricity 6 Active
US9837291B2 Wafer processing method and apparatus Emerging Cross-Sectional Technologies 6 Active
US9093511B2 Transistor having high breakdown voltage and method of making the same Electricity 4 Active
US7153776B2 Method for reducing amine based contaminants Electricity 4 Expired
US8969882B1 Transistor having an ohmic contact by screen layer and method of making the same Electricity 4 Active
US8975641B1 Transistor having an ohmic contact by gradient layer and method of making the same Electricity 3 Active
US8053838B2 Structures, fabrication methods, design structures for strained fin field effect transistors (FinFets) Electricity 3 Active
US9245991B2 Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing Electricity 3 Active
US7790553B2 Methods for forming high performance gates and structures thereof Electricity 3 Active
US7494918B2 Semiconductor structures including multiple crystallographic orientations and methods for fabrication thereof Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.