Method for manufacturing a semiconductor device using a nitrogen containing oxide layer
US8802577B2 · kind B2 · utility
2Cited by
12References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 5, 2011 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | May 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method for forming a semiconductor device, as well as a semiconductor device. The method for manufacturing a semiconductor device, among others, includes providing a gate structure (240) over a substrate (210), the gate structure (240) including a gate electrode (248) located over a nitrided gate dielectric (243), and forming a nitrided region (310) over a sidewall of the nitrided gate dielectric (243).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.