Patent · US Active

3D semiconductor device and structure

US8803206B1 · kind B1 · utility

78Cited by

337References

30Claims

0Family size

Assignee

Monolithic 3D Inc. · US

Inventors

Zvi Or-Bach · San Jose, US
Brian Cronquist · Klamath Falls, US
Deepak C. Sekar · Sunnyvale, US

Key dates

Filing date	Apr 3, 2013
Grant date	Aug 12, 2014
Priority date	—
Expiry date	Apr 3, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/0002
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A 3D semiconductor device, including: a first layer including first transistors; a second layer including second transistors; where the second transistors are aligned to the first transistors, and a first circuit including at least one of the first transistors, where the first circuit has a first circuit output connected to at least one of the second transistors, and where at least one of the second transistors is connected to a device output, and where the device output includes a contact port for connection to external devices, and where at least one of the second transistors is substantially larger than at least one of the first transistors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.