Method for fabricating contact electrode and semiconductor device
US8803208B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2011 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Feb 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a semiconductor device comprising: a substrate; a gate, which is formed on the substrate; a source and a drain, which are located on opposite sides of the gate, respectively; a contact, which contacts with the source and/or the drain, wherein the contact has an enlarged end at an end which is in contact with the source and/or the drain. In the present invention, since the contact area of the contact is increased on the interface in contact with the source/the drain, the contact resistance can be reduced, and thus the performances of the semiconductor device can be guaranteed/improved. The present invention further provides a method of fabricating the semiconductor device (especially the contact therein) as previously described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.