Tunneling field effect transistor having a lightly doped buried layer

US8803225B2 · kind B2 · utility

Assignee

• TSINGHUA UNIVERSITY · CN

Inventors

• Ning Cui · Beijing, CN
• Renrong Liang · Beijing, CN
• Jing Wang · Longbeilingcun, CN
• Jun Xu · Nanjing, CN

Key dates

• Filing date: Sep 6, 2012
• Grant date: Aug 12, 2014
• Expiry date: Sep 6, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/691

Abstract

A tunneling field effect transistor and a method for fabricating the same are provided. The tunneling field effect transistor includes: a semiconductor substrate and a drain layer formed in the semiconductor substrate, in which the drain layer is first type heavily doped; an epitaxial layer formed on the drain layer, with an isolation region formed in the epitaxial layer; a buried layer formed in the epitaxial layer, in which the buried layer is second type lightly doped; a source formed in the buried layer, in which the source is second type heavily doped; a gate dielectric layer formed on the epitaxial layer, and a gate formed on the gate dielectric layer; and a source metal contact layer formed on the source, and a drain metal contact layer formed under the drain layer.