Magnetic memory layer and magnetic memory device including the same
US8803265B2 · kind B2 · utility
46Cited by
3References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jun 28, 2011 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Aug 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/85
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory layer and a magnetic memory device including the same, the magnetic memory layer including a first seed layer; a second seed layer on the first seed layer, the second seed layer grown according to a <002> crystal direction with respect to a surface of the first seed layer; and a main magnetic layer on the second seed layer, the main magnetic layer grown according to the <002> crystal direction with respect to a surface of the second seed layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.