Nitride-based semiconductor light-emitting element
US8803274B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2010 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Jun 18, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3404
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A nitride-based semiconductor light-emitting element LE1 or LD1 has: a gallium nitride substrate 11 having a principal surface 11a which makes an angle α, in the range 40° to 50° or in the range more than 90° to 130°, with the reference plane Sc perpendicular to the reference axis Cx extending in the c axis direction; an n-type gallium nitride-based semiconductor layer 13; a second gallium nitride-based semiconductor layer 17; and a light-emitting layer 15 including a plurality of well layers of InGaN and a plurality of barrier layers 23 of a GaN-based semiconductor, wherein the direction of piezoelectric polarization of the plurality of well layers 21 is the direction from the n-type gallium nitride-based semiconductor layer 13 toward the second gallium nitride-based semiconductor layer 17.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.