Semiconductor device capable of reducing interelectrode leak current and manufacturing method thereof
US8803285B2 · kind B2 · utility
1Cited by
2References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 8, 2007 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Apr 29, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device has a capacitive structure formed by sequentially layering, on a wiring or conductive plug, a lower electrode, a capacitive insulation film, and an upper electrode. The semiconductor device has, as the capacitive structure, a thin-film capacitor having a lower electrode structure composed of an amorphous or microcrystalline film or a laminate of these films formed on a polycrystalline film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.