Method for manufacturing semiconductor devices having a glass substrate
US8803312B2 · kind B2 · utility
2Cited by
21References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 14, 2013 |
| Grant date | Aug 12, 2014 |
| Priority date | — |
| Expiry date | Aug 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/66
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing semiconductor devices is disclosed. A semiconductor wafer is provided having a first surface and a second surface opposite to the first surface. A first glass substrate is provided which has at least one of cavities and openings at the bonding surface. The first glass substrate is bonded to the first surface of the semiconductor wafer such that the metal pads are arranged within respective cavities or openings of the first glass substrate. The second surface of the semiconductor wafer is machined. At least one metallization region is formed on the machined second surface of the semiconductor wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.