MOS transistor with forward bulk-biasing circuit

US8803591B1 · kind B1 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Amit Roy · Noida, IN
• Amit Kumar Dey · Noida, IN
• Kulbhushan Misri · Barwala, IN
• Vijay Tayal · Noida, IN
• Chetan Verma · Sunnyvale, US

Key dates

• Filing date: Nov 6, 2013
• Grant date: Aug 12, 2014
• Expiry date: Nov 6, 2033

Classification

• Technology area (CPC H): Electricity
• CPC primary: H03K19/0027
• WIPO field: Control
• WIPO sector: Instruments

Abstract

Forward bulk biasing circuitry for PMOS and NMOS transistors is provided. The bulk biasing circuitry includes two N-type MOS transistors, two P-type MOS transistors, and two capacitors. The forward bias to a bulk terminal of a transistor increases a threshold voltage of a transistor, thereby reducing a transition time and improving the performance of the transistor. The forward bias is provided only when the transistor transitions from one state to another, thereby reducing leakage power dissipation during active and standby modes of an integrated circuit that includes the transistor.