Patent · US Active

PMOS pass gate

US8804407B1 · kind B1 · utility

0Cited by

11References

20Claims

0Family size

Assignee

Altera Corporation · US

Inventors

Jun Liu · 红钢城街道, CN
Albert Ratnakumar · San Jose, US
Irfan Rahim · Milpitas, US
Qi Xiang · San Jose, US

Key dates

Filing date	Jul 12, 2011
Grant date	Aug 12, 2014
Priority date	—
Expiry date	Nov 15, 2032

Classification

Technology area (CPC H)Electricity
CPC primaryH03K2217/0054
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An IC that includes a memory cell and a pass gate coupled to the memory cell, where the pass gate includes a PMOS transistor, is described. In one implementation, the PMOS transistor has a negative threshold voltage. In one implementation, the memory cell includes thick oxide transistors.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.