Patent · US Active

Semiconductor high-speed integrated electro-optic devices and methods

US8805130B2 · kind B2 · utility

9Cited by

13References

22Claims

0Family size

Assignee

Cornell University · IT

Inventors

Michal Lipson · New York, US
Sasikanth Manipatruni · Ithaca, US
Kyle Preston · Guilford, US
Bradley Schmidt · Richfield, US

Key dates

Filing date	Mar 16, 2011
Grant date	Aug 12, 2014
Priority date	—
Expiry date	Nov 4, 2032

Classification

Technology area (CPC G)Physics
CPC primaryG02F2203/15
WIPO fieldOptics
WIPO sectorInstruments

Abstract

Novel integrated electro-optic structures such as modulators and switches and methods for fabrication of the same are disclosed in a variety of embodiments. In an illustrative embodiment, a device includes a substrate with a waveguide and an optical resonator comprising polycrystalline silicon positioned on the substrate. First and second doped semiconducting regions also comprise polycrystalline silicon and are positioned proximate to the first optical resonator. The first optical resonator is communicatively coupled to the waveguide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.