Patent · US Active

Apparatus for modeling of FinFET width quantization

US8806419B2 · kind B2 · utility

1Cited by

2References

9Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Wilfried Ernest-August Haensch · Somers, US
Chung-Hsun Lin · White Plains, US
Philip J. Oldiges · Lagrangeville, US
Hailing Wang · Acton, US
Richard Q. Williams · South Burlington, US

Key dates

Filing date	Aug 20, 2013
Grant date	Aug 12, 2014
Priority date	—
Expiry date	Aug 20, 2033

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/0126
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

A method for modeling FinFET width quantization is described. The method includes fitting a FinFET model of a FinFET device to single fin current/voltage characteristics. The FinFET device comprises a plurality of fins. The method includes obtaining statistical data of at least one sample FinFET device. The statistical data includes DIBL data and SS data. The method also includes fitting the FinFET model to a variation in a current to turn off the finFETs device (IOFF) in the statistical data using the DIBL data and the SS data and determining a model for a voltage to turn off the finFETs device (VOFF). The method also includes fitting the FinFET model to the VOFF.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.