Semiconductor light emitting device, nitride semiconductor wafer, and method for manufacturing nitride semiconductor layer
US8809101B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2011 |
| Grant date | Aug 19, 2014 |
| Priority date | — |
| Expiry date | Aug 26, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/813
Abstract
According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga1−z1Inz1N (0<z1≦1). The second semiconductor layer is provided on the light emitting part. The In-containing layer is provided at at least one of first and second positions. The first position is between the first semiconductor layer and the light emitting part. The second position is between the second semiconductor layer and the light emitting part. The In-containing layer includes In with a composition ratio different from the In composition ratio z1 and has a thickness 10 nm to 1000 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.