Patent · US Active

High die strength semiconductor wafer processing method and system

US8809166B2 · kind B2 · utility

8Cited by

12References

9Claims

0Family size

Assignee

NXP B.V. · NL

Inventors

Hartmut Buenning · Norderstedt, DE
Sascha Moeller · Hamburg, DE
Martin Lapke · Hamburg, DE
Guido Albermann · Hamburg, DE
Thomas Rohleder · Hamburg, DE

Key dates

Filing date	Dec 20, 2012
Grant date	Aug 19, 2014
Priority date	—
Expiry date	Dec 20, 2032

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB23K2103/50
WIPO fieldMachine tools
WIPO sectorMechanical engineering

Abstract

Embodiments of methods and systems for processing a semiconductor wafer are described. In one embodiment, a method for processing a semiconductor wafer involves performing laser stealth dicing on the semiconductor wafer to form a stealth dicing layer within the semiconductor wafer and after performing laser stealth dicing, cleaning the semiconductor wafer from a back-side surface of the semiconductor wafer with a blade to remove at least a portion of the stealth dicing layer. Other embodiments are also described.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.