Nonvolatile semiconductor memory device
US8809931B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 20, 2013 |
| Grant date | Aug 19, 2014 |
| Priority date | — |
| Expiry date | Mar 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B43/35
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
According to one embodiment, there is provided a nonvolatile semiconductor memory device including a substrate, a laminated film which has a configuration where first insulating layers and first electrode layers are alternately laminated in a first direction vertical to the substrate, a second insulating layer formed on an inner wall of a first through hole pierced in the first insulating layers and the first electrode layers along the first direction, an intermediate layer formed on a surface of the second insulating layer, a third insulating layer formed on a surface of the intermediate layer, and a pillar-like first semiconductor region which is formed on a surface of the third insulating layer and extends along the first direction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.