Normally-off III-nitride metal-2DEG tunnel junction field-effect transistors

US8809987B2 · kind B2 · utility

Assignee

• The Hong Kong University of Science and Technology

Inventors

• Jing Chen · Hong Kong, CN
• Li Yuan · Dongguan, CN
• Hongwei Chen · Hangzhou City, CN
• Chunhua Zhou · Suzhou, CN

Key dates

• Filing date: Sep 8, 2010
• Grant date: Aug 19, 2014
• Expiry date: Sep 8, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/475

Abstract

Structures, devices and methods are provided for creating heterojunction AlGaN/GaN metal two-dimensional electron gas (2DEG) tunnel-junction field-effect transistors (TJ-FET). In one aspect, metal-2DEG Schottky tunnel junctions can be employed in group III-Nitride field-effect devices that enable normally-off operation, large breakdown voltage, low leakage current, and high on/off current ratio. As a further advantage, AlGaN/GaN metal-2DEG TJ-FETs are disclosed that can be fabricated in a lateral configuration and/or a vertical configuration. Further non-limiting embodiments are provided that illustrate the advantages and flexibility of the disclosed structures.