Patent · US Active

Wiring board, semiconductor device, and method for manufacturing wiring board

US8810007B2 · kind B2 · utility

2Cited by
11References
12Claims
0Family size

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Inventors

Key dates

Filing dateApr 17, 2012
Grant dateAug 19, 2014
Priority date
Expiry dateMay 16, 2032

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05K1/162
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A wiring board provided with a silicon substrate including a through hole that communicates a first surface and a second surface of the silicon substrate. A capacitor is formed on an insulating film, which is applied to the silicon substrate, on the first surface and a wall surface defining the through hole. A capacitor part of the capacitor includes a first electrode, a dielectric layer, and a second electrode that are sequentially deposited on the insulating film on the first surface and the wall surface of the through hole. A penetration electrode is formed in the through hole covered by the first electrode, the dielectric layer, and the second electrode of the capacitor part.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.