Resistance change element, method for manufacturing the same, and semiconductor memory
US8811058B2 · kind B2 · utility
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5References
13Claims
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Key dates
| Filing date | Jul 29, 2009 |
| Grant date | Aug 19, 2014 |
| Priority date | — |
| Expiry date | Feb 15, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A resistance change element including a first electrode; a second electrode; and an oxide film, including an oxide of the first electrode, formed at sides of the first electrode and sandwiched between the first electrode and the second electrode in a plurality of regions, wherein at least one of the regions includes a resistance part whose resistance value changes in accordance with a voltage applied to the first and second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.